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Other articles related with "ideality factor"：
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27105 |
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) |
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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Chin. Phys. B
2017 Vol.26 (2): 27105-027105
[Abstract]
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[HTML 1 KB]
[PDF 306 KB]
(411)
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68402 |
Adem Tataroğlu |
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Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes |
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Chin. Phys. B
2013 Vol.22 (6): 68402-068402
[Abstract]
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[HTML 1 KB]
[PDF 629 KB]
(1169)
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127201 |
Guo Wei-Ling (郭伟玲), Yan Wei-Wei (闫薇薇), Zhu Yan-Xu (朱彦旭), Liu Jian-Peng (刘建朋), Ding Yan (丁艳), Cui De-Sheng (崔德胜), Wu Guo-Qing (吴国庆) |
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Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes |
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Chin. Phys. B
2012 Vol.21 (12): 127201-127201
[Abstract]
(1031)
[HTML 1 KB]
[PDF 462 KB]
(3165)
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107207 |
M. A. Yeganeh,Sh. Rahmatallahpur, A. Nozad, and R. K. Mamedov |
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Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes |
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Chin. Phys. B
2010 Vol.19 (10): 107207-107207
[Abstract]
(1689)
[HTML 1 KB]
[PDF 3060 KB]
(1578)
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1618 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts |
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Chin. Phys. B
2009 Vol.18 (4): 1618-1621
[Abstract]
(1589)
[HTML 1 KB]
[PDF 334 KB]
(775)
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5029 |
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) |
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High-temperature current conduction through three kinds of Schottky diodes |
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Chin. Phys. B
2009 Vol.18 (11): 5029-5033
[Abstract]
(1619)
[HTML 1 KB]
[PDF 712 KB]
(721)
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